MICRO AND NANO FABRICATION (NTM 802)
Crystal Growth, Wafer Preparation, Epitaxy and
Oxidation: Basic
steps in IC fabrication. Electronic grade silicon. Crystal plane and orientation.
Defects in the lattice. Crystal growth. Silicon shaping and processing. Vapour
and liquid phase epitaxy, Epitaxial Evaluation. Growth mechanism. Thin
oxides. Oxidation Techniques and systems. Lithography, Wet and Dry Etching: Mask Making. Optical
lithography, Electron lithography, X-ray lithography, Ion lithography. Plasma
properties. Feature size control and Anisotropy Etch mechanism. Lift off
Techniques. Plasma reactor. Introduction to Atom Lithography based on
metastable atoms beam (MAB) and self-assembled monolayer structures (SAMs), on
Si substrates. Exposure to MAB. Arrays of Si (111), (110) and (100)
microstructures. Deposition,
Diffusion, Ion Implantation. Deposition processes: Physical
vapour deposition, Sputtering, Polysilicon, Plasma assisted deposition.
Models of diffusion in solids: Atomic diffusion mechanism. Device and MOS Circuit Fabrication: Isolation,
p-n junction isolation, self-alignment, local oxidation. Trench techniques:
Planarization, Chemical, mechanical polishing, Metallization and Gettering,
Basic MOS device considerations.