MICRO AND NANO FABRICATION (NTM 802)

Crystal Growth, Wafer Preparation, Epitaxy and Oxidation: Basic steps in IC fabrication. Electronic grade silicon. Crystal plane and orientation. Defects in the lattice. Crystal growth. Silicon shaping and processing. Vapour and liquid phase epitaxy, Epitaxial Evaluation. Growth mechanism. Thin oxides. Oxidation Techniques and systems. Lithography, Wet and Dry Etching: Mask Making. Optical lithography, Electron lithography, X-ray lithography, Ion lithography. Plasma properties. Feature size control and Anisotropy Etch mechanism. Lift off Techniques. Plasma reactor. Introduction to Atom Lithography based on metastable atoms beam (MAB) and self-assembled monolayer structures (SAMs), on Si substrates. Exposure to MAB. Arrays of Si (111), (110) and (100) microstructures. Deposition, Diffusion, Ion Implantation. Deposition processes: Physical vapour deposition, Sputtering, Polysilicon, Plasma assisted deposition. Models of diffusion in solids: Atomic diffusion mechanism. Device and MOS Circuit Fabrication: Isolation, p-n junction isolation, self-alignment, local oxidation. Trench techniques: Planarization, Chemical, mechanical polishing, Metallization and Gettering, Basic MOS device considerations.

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